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Datasheet Search Results 1 - 4 of about 4 for buz900d; buz900d: Magnatec: Silicon N-Channel Power Mosfet: 1710.43 Kb, 41 Pages.
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buz900d Breakdown Voltage = 160V, ID= 16A, PD= 250WPackage Type : TO3
| http://www.digchip.com/datasheets/parts/datasheet/290/BUZ900D.php |

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buz900d: N-channel power MOSFET for audio applications, 160V in 3-pin TO-3 package. Operational temperature range from -55 ð C to 150 ð C. Datasheet*
| http://www.chipdocs.com/datasheets/datasheet-pdf/MGNTC/BUZ900.html |

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| Datasheet Search Results 1 - 4 of about 4 for BUZ900D; BUZ900D: Magnatec: Silicon N-Channel Power Mosfet: 1710.43 Kb, 41 Pages. |
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| http://products.semelab-tt.com/pdf/magnatec/BUZ900D.pdf |
| BUZ900D datasheet - Breakdown Voltage = 160V, ID= 16A, PD= 250WPackage |
| BUZ900D Breakdown Voltage = 160V, ID= 16A, PD= 250WPackage Type : TO3 |
| http://www.digchip.com/datasheets/parts/datasheet/290/BUZ900D.php |
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| BUZ900D: N-channel power MOSFET for audio applications, 160V in 3-pin TO-3 package. Operational temperature range from -55 ð C to 150 ð C. Datasheet* |
| http://www.chipdocs.com/datasheets/datasheet-pdf/MGNTC/BUZ900.html |
| SEMELAB|BUZ900D|MOSFET, N, TO-3 | Farnell United Kingdom |
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| BUZ900D Magnatec | N-channel MOSFET,BUZ900D 16A 160V | 841-031 ... |
| This page shows Channel Type: N, Maximum Continuous Drain Current: 16A, Maximum Drain Source Voltage: 160V, Supplier Package: TO-3, Maximum Drain Source Resistance: 0.75é ... |
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